dmp4051lk3 document number ds32114 rev. 3 - 2 1 of 9 www.diodes.com february 2012 ? diodes incorporated a product line o f diodes incorporated dmp4051lk3 40v p-channel enhanc ement mode mosfet product summary v (br)dss r ds(on) i d t a = 25 c -40v 51m @ v gs = -10v -10.5a 85m @ v gs = -4.5v -8.4a description and applications this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. ? backlighting ? dc-dc converters ? power management functions features and benefits ? 100% unclamped inductive switch (uis) test in production ? low on-resistance ? fast switching speed ? ?green? component and rohs compliant (note 1) ? qualified to aec-q101 standards for high reliability mechanical data ? case: to252 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 (note 1) ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.33 grams (approximate) ordering information (notes 1 & 2) product grade marking reel size (inches) tape width (mm) quantity per reel dmp4051lk3-13 commercial p4051l 13 16 2,500 dmp4051lk3q-13 automotive p4051l 13 16 2,500 notes: 1. diodes, inc. defines ?green? products as those whic h are rohs compliant and contain no halogens or antimony compounds ; further information about diodes inc.?s ?green? policy can be found on our website. for packagi ng details, go to our website. 2. products with q-suffix are automotive grade. automotive produ cts are electrical and thermal the same as the commercial, exce pt where specified. marking information top view top view pin-out equivalent circuit gs d d d s g = manufacturer?s marking p4051l = product type marking code yyww = date code marking yy = year (ex: 09 = 2009) ww = week (01 - 53) to252 ? green yyww p4051l
dmp4051lk3 document number ds32114 rev. 3 - 2 2 of 9 www.diodes.com february 2012 ? diodes incorporated a product line o f diodes incorporated dmp4051lk3 maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss -40 v gate-source voltage (note 3) v gs 20 v single pulsed avalanche energy (note 9) e as 50 mj single pulsed avalanche current (note 9) i as 20.3 a continuous drain current v gs = 10v (note 5) i d -10.5 a t a = 70 c (note 5) -8.40 (note 4) -7.2 pulsed drain current v gs = 10v (note 6) i dm -28.9 a continuous source current (body diode) (note 5) i s -10.1 a pulsed source current (body diode) (note 5) i sm -28.9 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation linear derating factor (note 4) p d 4.18 33.4 w mw/ c (note 5) 8.9 71.4 (note 7) 2.14 17.1 thermal resistance, junction to ambient (note 4) r ja 29.9 c/w (note 5) 14.0 (note 7) 58.4 thermal resistance, junction to lead (note 8) r jl 2.46 operating and storage temperature range t j , t stg -55 to 150 c notes: 3. aec-q101 v gs maximum is 16v. 4. for a device surface mounted on 50mm x 50mm x 1.6mm fr4 pcb with high coverage of single sided 2oz copper, in still air cond itions; the device is measured when operating in a steady-state condition. 5. same as note 4, except the device is measured at t 10 sec. 6. same as note 4, except the device is pulsed with d = 0.02 and pulse width 300s. the pulse current is limited by the maximu m junction temperature. 7. for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air cond itions; the device is measured when operating in a steady-state condition. 8. thermal resistance from junction to so lder-point (at the end of the drain lead). 9. uis in production with l = 100h, v dd = -40v.
dmp4051lk3 document number ds32114 rev. 3 - 2 3 of 9 www.diodes.com february 2012 ? diodes incorporated a product line o f diodes incorporated dmp4051lk3 thermal characteristics 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 0.1 1 10 10m 100m 1 10 100m 1 10 10m 100m 1 10 t amb =25c 25mm x 25mm 1oz fr4 r ds(on) limited 100s 1ms 10ms 100ms 1s dc safe operating area -i d drain current (a) -v ds drain-source voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 50mm x 50mm 2oz fr4 25mm x 25mm 1oz fr4 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 5 10 15 20 25 30 35 t amb =25c 25mm x 25mm 1oz fr4 transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 25mm x 25mm 1oz fr4 50mm x 50mm 2oz fr4 safe operating area single pulse t amb =25c pulse power dissipation pulse width (s) max power dissipation (w) d=0.1 d=0.05 single pulse d=0.2 d=0.5 t amb =25c 50mm x 50mm 2oz fr4 transient thermal impedance pulse width (s) thermal resistance (c/w) t amb =25c 50mm x 50mm 2oz fr4 100s 1ms 10ms 100ms 1s dc r ds(on) limited -v ds drain-source voltage (v) -i d drain current (a)
dmp4051lk3 document number ds32114 rev. 3 - 2 4 of 9 www.diodes.com february 2012 ? diodes incorporated a product line o f diodes incorporated dmp4051lk3 electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss -40 ? ? v i d = -250 a, v gs = 0v zero gate voltage drain current i dss ? ? -0.5 a v ds = -40v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics gate threshold voltage v gs ( th ) -1.0 ? -3.0 v i d = -250 a, v ds = v gs static drain-source on-resistance (note 10) r ds (on) ? 0.041 0.051 ? v gs = -10v, i d = -12a 0.059 0.085 v gs = -4.5v, i d = -8a forward transconductance (notes 10 & 11) g fs ? 16.6 ? s v ds = -15v, i d = -12a diode forward voltage (note 10) v sd ? -0.98 -1.2 v i s = -12a, v gs = 0v reverse recovery time (note 11) t r r 138 ? ns i s = -12a, di/dt = 100a/ s reverse recovery charge (note 11) q r r ? 841 ? nc dynamic characteristics (note 11) input capacitance c iss ? 674 ? pf v ds = -20v, v gs = 0v f = 1mhz output capacitance c oss ? 115 ? pf reverse transfer capacitance c rss ? 67.7 ? pf total gate charge (note 12) q g ? 7.0 ? nc v gs = -4.5v v ds = -20v i d = -12a total gate charge (note 12) q g ? 14 ? nc v gs = -10v gate-source charge (note 12) q g s ? 2.2 ? nc gate-drain charge (note 12) q g d ? 3.7 ? nc turn-on delay time (note 12) t d ( on ) ? 2.3 ? ns v dd = -20v, v gs = -10v i d = -12a, r g ? 6.0 turn-on rise time (note 12) t r ? 14.1 ? ns turn-off delay time (note 12) t d ( off ) ? 25.1 ? ns turn-off fall time (note 12) t f ? 14.3 ? ns notes: 10. measured under pulsed conditions. pulse width 300 s; duty cycle 2% 11. for design aid only, not subject to production testing. 12. switching characteristics are independent of operating junction temperatures.
dmp4051lk3 document number ds32114 rev. 3 - 2 5 of 9 www.diodes.com february 2012 ? diodes incorporated a product line o f diodes incorporated dmp4051lk3 typical characteristics 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 1.5 2.0 2.5 3.0 3.5 0.1 1 10 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 10v 3.5v -v gs 2.5v 4v 3v output characteristics t = 25c -v gs -i d drain current (a) -v ds drain-source voltage (v) 3.5v 3v 2v 10v 2.5v output characteristics t = 150c -i d drain current (a) -v ds drain-source voltage (v) 4v typical transfer characteristics -v ds = 10v t = 25c t = 150c -i d drain current (a) -v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = -10v i d = -12a v gs( th) v gs = v ds i d = -250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 4.5v 10v 3v 4v 3.5v 2.5v on-resistance v drain current t = 25c -v gs r ds(on) drain-source on-resistance () -i d drain current (a) t = 150c t = 25c source-drain diode forward voltage -v sd source-drain voltage (v) -i sd reverse drain current (a)
dmp4051lk3 document number ds32114 rev. 3 - 2 6 of 9 www.diodes.com february 2012 ? diodes incorporated a product line o f diodes incorporated dmp4051lk3 typical characteristics - continued 0.1 1 10 0 200 400 600 800 1000 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) -v ds - drain - source voltage (v) 02468101214 0 2 4 6 8 10 v ds = -20v i d = -12a gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) -v gs gate-source voltage (v)
dmp4051lk3 document number ds32114 rev. 3 - 2 7 of 9 www.diodes.com february 2012 ? diodes incorporated a product line o f diodes incorporated dmp4051lk3 test circuits c urrent regulator charge gate charge test circuit switchin g time test circuit basic gate charge waveform switchin g time waveforms d.u.t 50k 0.2f 12v same as d.u.t v gs v gs v ds v g q gs q gd q g v gs 90% 10% t (on) t (on) t d(on) t r t r t d(off) v ds v dd r d r g pulse width 1s duty factor 0.1% v ds i d i g
dmp4051lk3 document number ds32114 rev. 3 - 2 8 of 9 www.diodes.com february 2012 ? diodes incorporated a product line o f diodes incorporated dmp4051lk3 package outline dimensions suggested pad layout to252 dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 ? ? e ? ? 2.286 e 6.45 6.70 6.58 e1 4.32 ? ? h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 ? all dimensions in mm dimensions value (in mm) z 11.6 x1 1.5 x2 7.0 y1 2.5 y2 7.0 c 6.9 e1 2.3 b3 e 2x b2 d l4 a c2 e a1 l l3 3x b a h a2 e1 x2 c z x1 y1 e1 y2
dmp4051lk3 document number ds32114 rev. 3 - 2 9 of 9 www.diodes.com february 2012 ? diodes incorporated a product line o f diodes incorporated dmp4051lk3 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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